東南大學(xué)電子器件金半接觸.ppt
《東南大學(xué)電子器件金半接觸.ppt》由會員分享，可在線閱讀，更多相關(guān)《東南大學(xué)電子器件金半接觸.ppt（25頁珍藏版）》請?jiān)谘b配圖網(wǎng)上搜索。
acceptor受主donor施主recombination復(fù)合majority多子minority少子transitionregion過渡區(qū)depletionregion耗盡區(qū)contactbarrier接觸勢壘p-njunctionpn結(jié)heterojunction/異質(zhì)結(jié)EHP電子空穴對homojunction/同質(zhì)結(jié),Schottkybarrier/肖特基勢壘barrierheight/勢壘高度ideal/理想的workfunction/功函數(shù)practical/實(shí)際的electronaffinity/電子親和能Fermilevel/費(fèi)米能級rectifier/整流器electrostaticpotential/靜電勢breakdown/擊穿rectifyingcontacts/整流接觸Ohmiccontacts/歐姆接觸surfacestate/表面態(tài)lattice-matched/晶格匹配的tunnelingeffect/隧道效應(yīng),半導(dǎo)體器件工作的基本方程,,泊松方程,電流密度方程,電流連續(xù)性方程,Manyoftheusefulpropertiesofap-njunctioncanbeachievedbysimplyforminganappropriatemetal-semiconductor(MS)contact.,5.7Metal-Semiconductorjunctionsorcontacts(金屬-半導(dǎo)體結(jié)、金-半接觸）,5.7.1SchottkyBarriers,http://en.wikipedia.org/wiki/Walter_H._Schottky,Possibly,inretrospect,Schottkysmostimportantscientificachievementwastodevelop(in1914)thewell-knownclassicalformula,nowwritten-q2/4πε0 x,fortheinteractionenergybetweenapointchargeqandaflatmetalsurface,whenthechargeisatadistancexfromthesurface.Owingtothemethodofitsderivation,thisinteractioniscalledthe"imagepotentialenergy"(imagePE).Schottkybasedhisworkonearlierworkby(Lord)KelvinrelatingtotheimagePEforasphere.SchottkysimagePEhasbecomeastandardcomponentinsimplemodelsofthebarriertomotion,M(x),experiencedbyanelectrononapproachingametalsurfaceorametal-semiconductorinterfacefromtheinside.,1.Schottkyeffect,(TheimagePEisusuallycombinedwithtermsrelatingtoanappliedelectricfieldFandtotheheighth(intheabsenceofanyfield)ofthebarrier.Thisleadstothefollowingexpressionforthedependenceofthebarrierenergyondistancex,measuredfromthe"electricalsurface"ofthemetal,intothevacuumorintothesemiconductor:Here,eistheelementarypositivecharge,ε0istheelectricconstantandεristherelativepermittivityofthesecondmedium(=1forvacuum).Inthecaseofametal-semiconductorjunction,thisiscalledaSchottkybarrier;inthecaseofthemetal-vacuuminterface,thisissometimescalledaSchottky-Nordheimbarrier.Inmanycontexts,hhastobetakenequaltothelocalworkfunctionφ.ThisSchottky-Nordheimbarrier(SNbarrier)hasplayedinimportantroleinthetheoriesofthermionicemissionandoffieldelectronemission.Applyingthefieldcausesloweringofthebarrier,andthusenhancestheemissioncurrentinthermionicemission.Thisiscalledthe"Schottkyeffect",andtheresultingemissionregimeiscalled"Schottkyemission".,Theworkfunction(功函數(shù)):TheenergywiththeworkfunctionisrequiredtoremoveanelectronattheFermileveltothevacuumoutsidethemetal.(Al=4.3eV)theelectronaffinity(電子親和能):Theenergywiththeelectronaffinityisrequiredtoremoveanelectronatthebottomoftheconductionbandtothevacuumoutsidethesemiconductors.(Si=4.1eV),,,,,,Foursetsofcombination:(1)metal-ntypesemiconductor,q?m>q?s(2)metal-ntypesemiconductor,q?mq?s(4)metal-ptypesemiconductor,q?mq?sMetal/n-typesemiconductor,,2.Schottkybarriers（肖特基勢壘）,chargetransferoccursuntiltheFermilevelsalignatequilibrium,theelectrostaticpotentialofthesemiconductormustberaisedV0theelectronenergymustbelowered.–qV0thedepletionregionisformednearthejunction.Contactpotentialbarrier:qV0=q?m-q?spotentialbarrierheightq?B=q?m-q?,ΦBiscalledSchottkybarrier,（2）Metal/ptypesemiconductor,q?m下載提示(請認(rèn)真閱讀)
- 1.請仔細(xì)閱讀文檔，確保文檔完整性，對于不預(yù)覽、不比對內(nèi)容而直接下載帶來的問題本站不予受理。
- 2.下載的文檔，不會出現(xiàn)我們的網(wǎng)址水印。
- 3、該文檔所得收入（下載+內(nèi)容+預(yù)覽）歸上傳者、原創(chuàng)作者；如果您是本文檔原作者，請點(diǎn)此認(rèn)領(lǐng)！既往收益都?xì)w您。
文檔包含非法信息？點(diǎn)此舉報(bào)后獲取現(xiàn)金獎勵！
下載文檔到電腦，查找使用更方便
9.9 積分
| 下載 |
還剩頁未讀，繼續(xù)閱讀
- 配套講稿：
如PPT文件的首頁顯示word圖標(biāo)，表示該P(yáng)PT已包含配套word講稿。雙擊word圖標(biāo)可打開word文檔。
- 特殊限制：
部分文檔作品中含有的國旗、國徽等圖片，僅作為作品整體效果示例展示，禁止商用。設(shè)計(jì)者僅對作品中獨(dú)創(chuàng)性部分享有著作權(quán)。
- 關(guān) 鍵 詞：
- 東南大學(xué) 電子器件 接觸
裝配圖網(wǎng)所有資源均是用戶自行上傳分享，僅供網(wǎng)友學(xué)習(xí)交流，未經(jīng)上傳用戶書面授權(quán)，請勿作他用。
鏈接地址：http://www.hcyjhs8.com/p-11514532.html